n20

FDA70N20Rev.A

FDA70N20200VN-ChannelMOSFETUniFETTM

FDA70N20

200VN-ChannelMOSFET

Features

•70A,200V,R

DS(on)

=0.035Ω@V

GS

=10V

•Lowgatecharge(typical66nC)

•LowC

rss

(typical89pF)

•Fastswitching

•100%avalanchetested

•Improveddv/dtcapability

Description

TheN-Channelenhancementmodepowerfieldeffecttransis-

torsareproducedusingFairchild’sproprietary,planarstripe,

DMOStechnology.

Thisadvancedtechnologyhasbeenespeciallytailoredtomini-

mizeon-stateresistance,providesuperiorswitchingperfor-

mance,andwithstandhighenergypulintheavalancheand

evicesarewellsuitedforhigheffi-

cientswitchedmodepowersuppliesandactivepowerfactor

correction.

AbsoluteMaximumRatings

ThermalCharacteristics

z

{

{

{

z

z

S

D

G

GSD

TO-3P

FDASeries

SymbolParameterFDA70N20Unit

V

DSS

Drain-SourceVoltage200V

I

D

DrainCurrent-Continuous(T

C

=25C)

-Continuous(T

C

=100C)

70

45

A

A

I

DM

DrainCurrent-Puld(Note1)280A

V

GSS

Gate-Sourcevolta宝宝童谣 ge30V

E

AS

SinglePuldAvalancheEnergy(Note2)1742mJ

I

AR

AvalancheCurrent(Note1)70A

E

AR

RepetitiveAvalancheEnergy(Note1)41.7mJ

dv/dtPeakDiodeRecoverydv/dt(Note3)4.5V/ns

P

D

Powe驴打滚是哪里的特产 rDissipation(T

C

=25C)

-Derateabove25C

417

3.3

W

W/C

T

J,

T

STG

OperatingandStorageTemperatureRange-55to+150C

T

L

MaximumLeadTemperatureforSolderingPurpo,

1/8”fromCafor5Seconds

300C

R

JC

ThermalResistance,Junction-to-Ca--0.3C/W

R

CS

ThermalResistance,Ca-to-Sink0.24--C/W

R

JA

ThermalResistance,Junction-to-Ambient--40C/W

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FDA70N20Rev.A

FDA70N20200VN-ChannelMOSFETPackageMarkingandOrderingInformation

ElectricalCharacteristicsT

C

=25Cunlessotherwinoted

NOTES:

tiveRating:Pulwidthlimitedbymaximumjunctiontemperature

2.L=0.533mH,I

AS

=70A,V

DD

=50V,R

G

=25Ω,StartingT

J

=25C

3.I

SD

≤70A,di/dt≤200A/s,V

DD

≤BV

DSS

,StartingT

J

=25C

est:Pulwidth≤300s,DutyCycle≤2%

iallyIndependentofOperatingTemperatureTypicalCharacteristics

DeviceMarkingDevicePackageReelSizeTapeWidthQuantity

FDA70N20FDA70N20TO-3P--30

ts

OffCharacteristics

BV

DSS

Drain-SourceBreakdownVoltageV

GS

=0V,I

D

=250A200----V

∆BV

DSS

/∆T

J

BreakdownVoltageTemperature

Coefficient

I

D

=250A,Referencedto25C--0.2--V/C

I

DSS

ZeroGateVoltageDrainCurrentV

DS

=200V,V

GS

=0V

V

DS

=160V,T

C

=125C

--

--

--

--

1

10

A

A

I

GSSF

Gate-BodyLeakageCurrent,ForwardV

GS

=30V,V

DS

=0V----100nA

I

GSSR

Gate-BodyLeakageCurrent,ReverV

GS

=-30V,V

DS

=0V-----100nA

OnCharacteristics

V

GS(th)

GateThresholdVoltageV

DS

=V

GS

,I

D

=250A3.0--5.0V

R

DS(on)

StaticDrain-Source

On-Resistance

V

GS

=10V,I

D

=35A--0.0290.035Ω

g

FS

ForwardTransconductanceV

DS

=40V,I

D

=35A(Note4)--47--S

DynamicCharacteristics

C

iss

InputCapacitanceV

DS

=25V,V

GS

=0V,

f=1.0MHz

--30503970pF

C

oss

OutputCapacitance--750980pF

C

rss

ReverTransferCapacitance--89130pF

SwitchingCharacteristics

t

d(on)

Turn-OnDelayTimeV

DD

=100V,I

D

=70A

R

G

=25Ω

(Note4,5)

--71150ns

t

r

Turn-OnRiTime--235480ns

t

d(off)

Turn-OffDelayTime--65140ns

t

f

Turn-OffFallTime--3988ns

Q

g

TotalGateChargeV

DS

=160V,I

D

=70A

V

GS

=10V

(Note4,5)

--6686nC

Q

gs

Gate-SourceCharge--19--nC

Q

gd

Gate-DrainCharge--26--nC

Drain-SourceDiodeCharacteristicsandMaximumRatings

I

S

MaximumContinuousDrain-SourceDiodeForwardCurrent----70A

I

SM

MaximumPuldDrain-SourceDiodeForwardCurrent----280A

V

SD

Drain-SourceDiodeForwardVoltageV

GS

=0V,I

S

=70A----1.4V

t

rr

ReverRecoveryTimeV

GS

=0V,I

S

=70A

dI

F

/dt=100A/s(Note4)

--175--ns

Q

rr

ReverRecoveryCharge--4.1--C

元器件交易网

FDA70N20Rev.A

FDA70N20200VN-ChannelMOSFETTypicalPerformanceCharacteristics

erCharacteristics

odeForwardVoltage

Current

andTemperatue

argeCharacteristics

10-1100101

100

101

102

V

GS

Top:15.0V

10.0V

8.0V

7.0V

6.5V

Bottom:6.0V

Notes:※

1.250sPulTest

2.T

C

=25℃

I

D中国名吃

,

Dr

ai

n

C

u

r

r

e

nt

[

A]

V

DS

,Drain-SourceVoltage[V]

24681012

100

101

102

150oC

25oC

-55oC

Notes:※

1.V

DS

=40V

2.250sPulTest

I

D

,

Dr

ai

n

C

u

r国民党军衔

r

e

nt

[

A]

V

GS

,Gate-SourceVoltage[V]

5150175200

0.03

0.04

0.05

0.06

V

GS

=20V

V

GS

=10V

Note:T※

J

=25℃

R

D

S(

O

N)

[

Ω

]

,

Dr

ai

n

-

S

o

u

r

c

e

O

n

-

R

e

si

s

t

a

n

c

e

I

D

,DrainCurrent[A]

0.20.40.60.81.01.21.41.61.8

100

101

102

150℃

Notes:※

1.V

GS

=0阴山公主 V

2.250sPulTest

25℃

I

D

R

,

R

e

v

e

r

s

e

Dr

ai

n

C

u

r

r

e

nt

[

A]

V

SD

,Source-Drainvoltage[V]

10-1100101

0

2000

4000

6000

8000

C

iss

=C

gs

+C

gd

(C

ds

=shorted)

C

oss

=C

ds

+C

gd

C

rss

=C

gd

Note;※

1.V

GS

=0V

2.f=1MHz

C

rss

C

oss

C

iss

C

a

p

a

ci

t

a

n

c

e

s

[

p

F]

V

DS

,Drain-SourceVoltage[V]

070

0

2

4

6

8

10

12

V

DS

=100V

V

DS

=40V

V

DS

=160V

Note:I※

D

=70A

V

G

S

,

G

a

t

e

-

S

o

u

r

c

e

V

ol

t

a

g

e

[

V]

Q

G

,TotalGateCharge[nC]

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FDA70N20Rev.A

FDA70N20200VN-ChannelMOSFETTypicalPerformanceCharacteristics(Continued)

-ResistanceVariation

ature

mDrainCurrent

mperature

entThermalResponCurve

-100-50

0.8

0.9

1.0

1.1

1.2

Notes:※

1.V

GS

=0V

2.I

D

=250A

B

V

D

S

S

,

(

N

o

r

m

al

i

z

e

d

)

Dr

ai

n

-

S

o

u

r

c

e

Br

e

a

k

d

o

w

n

V

ol

t

a

g

e

T

J

,JunctionTemperature[oC]

-100-50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

?Notes:

1.V

GS

=10V

2.I

D

=35A

R

D

S(

O

N)

,

(

N

o

r

m

al

i

z

e

d

)

Dr

ai

n

-

S

o

u

r

c

e

O

n

-

R

e

si

s

t

a

n

c

e

T

J

,JunctionTemperature[oC]

100101102

10-2

10-1

100

101

102

103

100ms

1ms

10s

DC

10ms

100s

OperationinThisArea

isLimitedbyR

DS(on)

?Notes:

1.T

C

=25oC

2.T

J

=150oC

Pul

I

D

,

Dr

ai

n

C

u

r

r

e

n

t

[

A]

V

DS

,Drain-SourceVoltage[V]

255

0

10

20

30

40

50

60

70

80

I

D

,

Dr

ai

n

C

u

r

r

e

n

t

[

A]

T

C

,CaTemperature[]℃

10-510-410-310-210-1100101

10-2

10-1

Notes:※

1.Z

JC

(t)=0.3/WMax.℃

ctor,D=t

1

/t

2

3.T

JM

-T

C

=P

DM

*Z

JC

(t)

singlepul

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

J

C(

t

)

,

T

h

e

r

m

al

R

e

s

p

o

n

s

e

t

1

,SquareWavePulDuration[c]

t

1

P

DM

t

2

元器件交易网

FDA70N20Rev.A

FDA70N20200VN-ChannelMOSFETSameType

Charge

V入党容易吗

GS

10V

Q

g

Q

gs

Q

gd

3mA

V

GS

DUT

V

DS

300nF

50K

200nF

12V

asDUT

V

GS

V

DS

10%

90%

t

d(on)

t

r

t

on

t

off

t

d(off)t

f

V

DD

10V

V

DS

R

L

DUT

R

G

V

GS

--------------------

E=L

AS

I

AS

2

1

----

2

BV

DSS

-V

DD

BV

DSS

V

DD

V

DS

BV

DSS

t

p

V

DD

I

AS

V

DS

(t)

I

D

(t)

Time

10V

DUT

R

G

L

I

D

t

p

GateChargeTestCircuit&Waveform

ResistiveSwitchingTestCircuit&Waveforms

UnclampedInductiveSwitchingTestCircuit&Waveforms

元器件交易网

FDA70N20Rev.A

FDA70N20200VN-ChannelMOSFETPeakDiodeRecoverydv/dtTestCircuit&Waveforms

SameType

•

V

I

V

BodyDiode

DUT

V

DS

+

_

Driver

R

G

asDUT

V

GSdv/dtcontrolledbyR

G

•I

SD

controlledbypulperiod

V

DD

L

I

SD

10V

GS

(Driver)

SD

(DUT)

DS

(DUT)

V

DD

ForwardVoltageDrop

V

SD

I

FM

,BodyDiodeForwardCurrent

BodyDiodeReverCurrent

I

RM

BodyDiodeRewps模式 coverydv/dt

di/dt

--------------------------

D=

GatePulWidth

GatePulPeriod

元器件交易网

FDA70N20Rev.A

FDA70N20200VN-ChannelMOSFETMechanicalDi英语句型 mensions(Continued)

15.600.20

4.800.20

13.600.20

9.600.20

2.000.20

3.000.20

1.000.20

1.400.20

3.200.10

3

.

8

0

0

.

2

0

1

3.

9

0

0.

2

0

3.

5

0

0

.

2

0

1

6

.

5

0

0

.

3

0

1

2.

7

6

0

.

2

0

1

9.

9

0

0.

2

0

2

3.

4

0

0.

2

0

1

8.

7

0

0

.

2

0

1.50

+0.15

–0.05

0.60

+0.15

–0.05

5.45TYP

[5.450.30]

5.45TYP

[5.450.30]

TO-3P

DimensionsinMillimeters

元器件交易网

TRADEMARKS

ThefollowingareregisteredandunregisteredtrademarksFairchildSemiconductorownsorisauthorizedtouandisnotintendedto

beanexhaustivelistofallsuchtrademarks.

FDA70N20Rev.A

FDA70N20200VN-ChannelMOSFET

DISCLAIMER

FAIRCHILDSEMICONDUCTORRESERVESTHERIGHTTOMAKECHANGESWITHOUTFURTHERNOTICETOANY

PRODUCTSHEREINTOIMPROVERELIABILITY,ILDDOESNOTASSUMEANYLIABILITY

ARISINGOUTOFTHEAPPLICATIONORUSEOFANYPRODUCTORCIRCUITDESCRIBEDHEREIN;NEITHERDOESIT

CONVEYANYLICENSEUNDERITSPATENTRIGHTS,NORTHERIGHTSOFOTHERS.

LIFESUPPORTPOLICY

FAIRCHILD’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESOR

SYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

Asudherein:

pportdevicesorsystemsaredevicesorsystemswhich,

(a)areintendedforsurgicalimplantintothebody,or(b)support

orsustainlife,or(c)whofailuretoperformwhenproperlyud

inaccordancewithinstructionsforuprovidedinthelabeling,

canbereasonablyexpectedtoresultinsignificantinjurytothe

ur.

calcomponentisanycomponentofalifesupportdevice

orsystemwhofailuretoperformcanbereasonablyexpected

tocauthefailureofthelifesupportdeviceorsystem,orto

affectitssafetyoreffectiveness.

PRODUCTSTATUSDEFINITIONS

DefinitionofTerms

DatasheetIdentificationProductStatusDefinition

AdvanceInformationFormativeorIn

Design

Thisdatasheetcontainsthedesignspecificationsfor

icationsmaychangein

anymannerwithoutnotice.

PreliminaryFirstProductionThisdatasheetcontainspreliminarydata,and

supplementarydatawillbepublishedatalaterdate.

FairchildSemiconductorrervestherighttomake

changesatanytimewithoutnoticeinordertoimprove

design.

NoIdentificatild

Semiconductorrervestherighttomakechangesat

anytimewithoutnoticeinordertoimprovedesign.

ObsoleteNotInProductionThisdatasheetcontainsspecificationsonaproduct

thathasbeendiscontinuedbyFairchildmiconductor.

Thedatasheetisprintedforreferenceinformationonly.

FAST

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I

2

C™

i-Lo™

ImpliedDisconnect™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

Power欧几里得空间 Saver™

PowerTrench

QFET

QS™

QTOptoelectronics™

QuietSeries™

RapidConfigure™

RapidConnect™

SerDes™

SILENTSWITCHER

SMART初三复读怎么申请 START™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic

TINYOPTO™

TruTranslation™

UHC™

UltraFET

UniFET™

VCX™

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E

2

CMOS™

EnSigna™

FACT™

FACTQuietSeries™

theworld.™

ThePowerFranchi

ProgrammableActiveDroop™

Rev.I14

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